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SMD Type
MOSFET
MOS Field Effect Transistor 2SK3740
TO-263
Features
Gate voltage rating: 30 V
+0.2 8.7-0.2 +0.1 1.27-0.1
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
RDS(on) = 160 mU MAX. (VGS = 10 V, ID = 10 A) Low gate charge
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+0.2 5.28-0.2
QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A) Surface mount package available
2.54 5.08
+0.1 -0.1
+0.2 2.54-0.2
+0.2 15.25-0.2
+0.2 2.54-0.2
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 250 30 20 60 1.5 100 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on) Ciss Coss Crss ton tr toff tf QG QGS QGD VDD = 200V VGS = 10 V ID =20A ID=10A,VGS(on)=10V,RG=0 ,VDD=125V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=250V,VGS=0 VGS= 30V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=10A VGS=10V,ID=10A 2.5 7.0 3.5 15 0.12 1720 330 170 17 17 49 9 47 7 25 0.16 Min Typ Max 10 10 4.5 Unit A A V S U pF pF pF ns ns ns ns nC nC nC
5.60
1 Gate 2 Drain 3 Source
Low on-state resistance
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